Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness
Maolin Zhang, Yufeng Guo, Jun Zhang, Jiafei Yao et al. • Nanoscale Research Letters
(2020)
Abstract Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architectu...
DOAJ
Open Access (DOAJ)
DOI:
10.1186/s11671-020-03360-7