MODELING OF LPCVD SILICON NITRIDE PROCESS
Overview & Synopsis
Much attention has been paid to the modeling of LPCVD process by several research groups and authors. Our simulation model of LPCVD process was proposed in 1979 and 1980, and then improved and extended several times. Our simulation formulae are algebraic, so it is easy to be used. Our model was successfully used for the LPCVD Poly-Si process in our previous papers, and also for the LPCVD Si3N4 process in this paper. The theoretical results agree very well with experiments reported in literature.
Indexed from repository: HAL Open Science
(
hal.science)
Keyboard Shortcuts:
← / → for pages • + / - for zoom • 0 to fit width
Powered by Mozilla PDF.js v3.11
Document Information
| Document Title | MODELING OF LPCVD SILICON NITRIDE PROCESS |
|---|---|
| Author / Organization | Ji-Tao Wang, Shi-Li Zhang, Yong-Fa Wang, Wei Zhang, Zheng-Chang Chen, Ke-Yun Zhang, Yuan-Fang Wang |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1989 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-177018 |
| Original Source Link | Visit Source Page on hal.science » |