TEMPERATURE DEPENDENCE OF CL AND EBIC IMAGES OF DISLOCATED GaAs AND Si
Overview & Synopsis
The interactions of dislocations with impurities and/or point defects in GaAs and Si crystals with various thermal histories are investigated by observing the temperature dependence of -the CL and EBIC images. Since the impurity distribution around a dislocation changes drastically with temperature, the specimens with different thermal histories show various CL or EBIC contrasts reflecting the distribution of impurities and/or point defects.
Indexed from repository: HAL Open Science
(
hal.science)
Keyboard Shortcuts:
← / → for pages • + / - for zoom • 0 to fit width
Powered by Mozilla PDF.js v3.11
Document Information
| Document Title | TEMPERATURE DEPENDENCE OF CL AND EBIC IMAGES OF DISLOCATED GaAs AND Si |
|---|---|
| Author / Organization | T. Sekiguchi, Y. Miyamura, K. Sumino |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1989 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-177886 |
| Original Source Link | Visit Source Page on hal.science » |