Transient reflecting grating study of ion-implanted semiconductors
Overview & Synopsis
Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV ; dose, 1011 - 1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).
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Document Information
| Document Title | Transient reflecting grating study of ion-implanted semiconductors |
|---|---|
| Author / Organization | A. Harata, H. Nishimura, Q. Shen, T. Tanaka, T. Sawada |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1994 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-232195 |
| Original Source Link | Visit Source Page on hal.science » |