On Schockley-Read-Hall Model with Finite Relaxation Time of Traps for Surface Recombination Velocity in Case of Illumination
Overview & Synopsis
In this paper we discuss the Schockley-Read-Hall model for the surface recombinaison velocity in the case of illumination with the photon flux density. The traps have a finite time of relaxation. We estimate for a n-type silicon the surface recombinaison velocity in all injection charge cases. Finally, we evaluate the importance of different parameters in the value of surface recombinaison velocity.
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Document Information
| Document Title | On Schockley-Read-Hall Model with Finite Relaxation Time of Traps for Surface Recombination Velocity in Case of Illumination |
|---|---|
| Author / Organization | C. Flueraru |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1995 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-234492 |
| Original Source Link | Visit Source Page on hal.science » |