NON-DESTRUCTIVE CHARACTERISATION OF DEVICE PROCESSING OF SILICON-ON-SAPPHIRE (SOS) WAFERS
Overview & Synopsis
Spectrosopic ellipsometry has been used to obtain microstructural and layer thickness information from processed SOS wafers consisting of poly-Si/gate oxide/epi- Si/sapphire structures. Oxide thickness and interface roughness increased for 0.1 µm SOS wafers. Poly-Si formed by annealing α-Si deposited layers had the best dielectric function and similar structure and thicknesses were obtained on bulk and SOS wafers.
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hal.science)
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Document Information
| Document Title | NON-DESTRUCTIVE CHARACTERISATION OF DEVICE PROCESSING OF SILICON-ON-SAPPHIRE (SOS) WAFERS |
|---|---|
| Author / Organization | C. Pickering, S. Sharma, S. Collins, A. Morpeth, G. Terry, A. Hodge |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1988 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-238909 |
| Original Source Link | Visit Source Page on hal.science » |